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EQUIPMENT SPECIFICATIONS

Canon Stepper FPA-3000 iW Stepper

Reticle: 1.    Size 6" square t=0.25"
2.    Material Quartz
3.    Pattern Material 2 layer Cr, 3 layer Cr
4.    Pellicle Frame Pattern Side Only
 
Wafer: 1.   Size  4” thru 8” SEMI Standard, JEIDA,  Notch / Flat
 
Projection Optics: 1.    Projection Magnification 1/2 X
2     Numerical Aperture 0.24
3.    Field Size 50X50mm
4.    Exposure Light   i-line (365nm)
 
Illumination: 1.    Light Source 2.0KW Super High Pressure Hg Lamp
2.    Intensity  2500 W/m2
3.    Uniformity < 1.5%
 
Printing Performance: 1.    Resolution <0.8μm
2.    Depth of Focus >4.0μm (0.8μm L&S)
3.    Image Field Deviation <2.5μm
4.    Distortion <±0.11μm
 
Alignment: 1.    Reticle Rotation Accuracy <±0.02μm on wafer
2.    Reticle Rotation Repeatability <0.05μm) on wafer
3.    Wafer Alignment <0.10μm  mean + 3sigma 
 
Focus/Leveling: 1.    Focus Repeatability <0.10μm (3sigma)
 
Leveling: 1.    Leveling Repeatability <7ppm (3sigma)
2.    Minimum Compensation Range >100ppm
 
Stage: 1.    Step Accuracy <0.05μm (3sigma)
2.    Scaling <±1.0ppm
3.    Orthogonality <±1.0ppm
 
Throughput: 1.    >120 wafers/hour Φ6", 50mm, 9 shots
2.    >115 wafers/hour Φ8", 50mm, 14 shots